The degradation of epitaxial thin films of YBa2Cu3O7 has been studied
as a function of annealing temperature in air and in vacuum; some samp
les had an evaporated overlayer of CaF2. Degradation was monitored by
the measurement of electrical properties after consecutive 30-min anne
aling treatments. The room-temperature resistance registered significa
nt increases for all samples after annealing at temperatures above abo
ut 200 degrees C; the critical current density at 77 K was degraded fo
r annealing temperatures greater than or equal to 400 degrees C in air
, and greater than or equal to 200-250 degrees C in vacuum. By anneali
ng in oxygen at 550 degrees C, electrical properties were restored in
degraded bare YBCO samples annealed in vacuum, but not for those annea
led in