REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(111) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON-DIFFRACTION

Authors
WANG LW LIN CG SHEN QW LIN X NI RS ZOU SC
Citation
Lw. Wang et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(111) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON-DIFFRACTION, Applied physics letters, 66(25), 1995, pp. 3453-3455
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
25
Year of publication
1995
Pages
3453 - 3455
Database
ISI
SICI code
0003-6951(1995)66:25<3453:RDEOBF>2.0.ZU;2-C