LOW-TEMPERATURE VAPOR-PHASE ETCHING OF SILICON-CARBIDE BY DIOXYGEN DIFLUORIDE

Authors
MOALEM M OLANDER DR BALOOCH M
Citation
M. Moalem et al., LOW-TEMPERATURE VAPOR-PHASE ETCHING OF SILICON-CARBIDE BY DIOXYGEN DIFLUORIDE, Applied physics letters, 66(25), 1995, pp. 3480-3482
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
25
Year of publication
1995
Pages
3480 - 3482
Database
ISI
SICI code
0003-6951(1995)66:25<3480:LVEOSB>2.0.ZU;2-R