DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100) SI SIO2 INTERFACE DEFECTS/

Authors
STATHIS JH
Citation
Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100) SI SIO2 INTERFACE DEFECTS/, Journal of applied physics, 77(12), 1995, pp. 6205-6207
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
12
Year of publication
1995
Pages
6205 - 6207
Database
ISI
SICI code
0021-8979(1995)77:12<6205:DKOH(S>2.0.ZU;2-M