STUDY OF RF-SPUTTERED YTTRIUM-OXIDE FILMS ON SILICON BY CAPACITANCE MEASUREMENTS

Authors
LING CH BHASKARAN J CHOI WK AH LK
Citation
Ch. Ling et al., STUDY OF RF-SPUTTERED YTTRIUM-OXIDE FILMS ON SILICON BY CAPACITANCE MEASUREMENTS, Journal of applied physics, 77(12), 1995, pp. 6350-6353
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
12
Year of publication
1995
Pages
6350 - 6353
Database
ISI
SICI code
0021-8979(1995)77:12<6350:SORYFO>2.0.ZU;2-0