Sx. Wang et al., ION IRRADIATION-INDUCED AMORPHIZATION IN THE AL2O3-SIO2 SYSTEM - A COMPARISON WITH GLASS-FORMATION, Journal of applied physics, 81(2), 1997, pp. 587-593
The ion beam-induced crystalline-to-amorphous transition has been inve
stigated for crystalline phases in the Al2O3-SiO2 system: Al2O3, SiO2
(quartz), Al2SiO5 (kyanite, andalusile, sillimanite), and 3Al(2)O(3) .
2SiO(2) (mullite). Xe+ 1.5 MeV was used to irradiate samples at tempe
ratures from 15 to 1023 K in situ in a transmission electron microscop
e to determine the critical amorphization doses. The susceptibility to
amorphization is (highest to lowest): quartz, sillimanite, kyanite, a
ndalusite, mullite, and alumina. These data are compared to viscositie
s and activation energies for viscous flow of melts in this system. Th
e doses required for amorphization by ion irradiation are related to t
he viscosities of the melts. The activation energies for irradiation-e
nhanced annealing are qualitatively correlated with the activation ene
rgies of viscous flow. These results suggest a parallel between ion be
am irradiation-induced amorphization and glass formation. Glass-formin
g ''ability'' correlates with susceptibility to radiation-induced amor
phization. (C) 1997 American Institute of Physics.