ENERGY-BAND STRUCTURE OF ULTRA-THIN-LAYERED (GAAS)(N) (ALAS)(N)/

Authors
JEONG SY MOH HJ SHIM K
Citation
Sy. Jeong et al., ENERGY-BAND STRUCTURE OF ULTRA-THIN-LAYERED (GAAS)(N) (ALAS)(N)/, Journal of the Korean Physical Society, 28(3), 1995, pp. 343-347
Citations number
27
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
28
Issue
3
Year of publication
1995
Pages
343 - 347
Database
ISI
SICI code
0374-4884(1995)28:3<343:ESOU((>2.0.ZU;2-R
Abstract
The energy bands and the density of states of the ultra-thin-layered s emiconductor superlattices (GaAs)(n)/(AlAs)(n) with n = 1, 2, 3, and 4 layers are calculated by the sp(3)s tight-binding method, utilizing the Ga0.5Al0.5As alloying states for the interface parameters. A compa rison of our theoretical results with other experimental and theoretic al data shows good agreement.