Kh. Lee et al., INTENSITY-DEPENDENT DECAY TIMES OF EXCITED ELECTRONS IN SEMICONDUCTOR-DOPED GLASSES, Journal of the Korean Physical Society, 28(3), 1995, pp. 391-394
The intensity-dependent decay times of excited electrons in semiconduc
tor-doped glasses were measured by using a time-correlated single-phot
on counting system. On the basis of the experimental measurements, we
propose a simple model based on the surface states, the permanent trap
s, and the penetrating and back-scattered electrons in the glasses. An
analysis based on our model shows that the photodarkening and the slo
w photoluminescence decay were mainly due to the permanent trapping of
the penetrating electrons and to the radiative decay of the re-excite
d electrons from the traps in the glass, respectively.