TUNNELING ESCAPE RATES OF ELECTRONS FROM QUANTUM DOTS WITH 2 QUASI-BOUND STATES

Authors
Citation
Jx. Zhu et Zd. Wang, TUNNELING ESCAPE RATES OF ELECTRONS FROM QUANTUM DOTS WITH 2 QUASI-BOUND STATES, Physics letters. A, 202(1), 1995, pp. 126-128
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
03759601
Volume
202
Issue
1
Year of publication
1995
Pages
126 - 128
Database
ISI
SICI code
0375-9601(1995)202:1<126:TEROEF>2.0.ZU;2-D
Abstract
Based upon the tunneling Hamiltonian, the lifetime of electrons in the quasibound state of quantum dots with single and two quasibound state s is calculated analytically. It has been shown exactly that the lifet ime of electrons remaining in one of the quasibound states for two-qua sibound-state quantum dots is shorter than that for single-quasibound- state quantum dots with the same resonant energy.