Vi. Polyakov et al., PHOTOELECTRICAL EFFECTS IN HETEROSTRUCTURES BASED ON HF-CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 4(8), 1995, pp. 1061-1064
Thin polycrystalline diamond films were grown on tungsten substrates f
rom a mixture of 0.5%-1.5% methane or acetone and hydrogen by the hot
filament CVD technique. Metal-diamond film-metal diodes were fabricate
d with Ni or Ti semitransparent electrodes on top of the films. Electr
ical and photoelectrical characteristics of the diodes were investigat
ed. It was shown that in such diodes made with insulating undoped CVD
diamond films, the built-in electrical held exists owing to the differ
ence in barriers at the opposite metal-diamond interfaces. This barrie
r difference was measured using the photovoltage saturation method. It
was shown that the photovoltaic elements develop maximum photovoltage
s of 0.7 V for the Ni electrode and I V for the Ti one at zero bias.