A CONTINUUM MODEL FOR LIQUID-PHASE ELECTROEPITAXY

This paper presents a macroscopic continuum model for liquid phase ele ctroepitaxial growth of single crystal semiconductors. The governing e quations and associated boundary and interface conditions of the model are obtained from the fundamental principles of electrodynamics and t hermomechanics of continua. The constitutive equations of the substrat e/source and the liquid phase are derived from an irreversible rationa l thermodynamic theory. By means of systematic simplifications, specia l forms of the governing equations and associated interface conditions are presented in order to obtain tractable equations and gain physica l insight for various thermoelectric effects involved in the process. The formulation presented here is valid for general LPEE growth proces ses with any configuration, and takes into account electromigration an d the well-known thermoelectric effects such as Joule, Peltier, Thomso n, Dufour, and Soret. The fundamental equations derived here can also be used to model the growth process of ternary compound semiconductors , either directly or with modifications depending on the type of compo sitions considered.