A PHYSICAL ANALYSIS OF DRAIN CURRENT TRANSIENTS AT LOW DRAIN VOLTAGE IN THIN-FILM SOI MOSFETS

This paper shows that drain current transients (overshoots) related to floating body effects or unexpected impact ionization can occur in pa rtially-depleted thin-film SOI MOSFETs at low drain voltage when pulsi ng one or both of the gates. Hot-carrier degradation has to be associa ted to such transients. The overshoot of the drain current has been in vestigated as a function of the front and back gate biases. The use of the reverse Zerbst-type experiment for buried oxide interface state e valuation is also presented.