FACTORS INFLUENCING THERMAL-CONDUCTIVITY IN DIAMOND FILM

Citation
Cz. Gu et al., FACTORS INFLUENCING THERMAL-CONDUCTIVITY IN DIAMOND FILM, Chinese Physics Letters, 13(9), 1996, pp. 700-702
Citations number
7
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
13
Issue
9
Year of publication
1996
Pages
700 - 702
Database
ISI
SICI code
0256-307X(1996)13:9<700:FITIDF>2.0.ZU;2-J
Abstract
Diamond films were synthesized on Si substrate by electron-assisted ch emical vapor deposition method using gas mixtures of methane (or aceto ne) and hydrogen. Various crystal structures of diamond films were obt ained by synthesis with various deposition conditions. The influences of various deposition conditions on thermal conductivity of diamond fi lm were studied. The results show that large-grain (100)-oriented diam ond films synthesised at lower concentration of methane end acetone ha ve higher thermal conductivity and thermal conductivity increases with the increasing in film thickness and the removal of the SiC layer on the back of the film, at last, annealing in ambience of hydrogen is ad vantageous to acquiring diamond him with high thermal conductivity.