Diamond films were synthesized on Si substrate by electron-assisted ch
emical vapor deposition method using gas mixtures of methane (or aceto
ne) and hydrogen. Various crystal structures of diamond films were obt
ained by synthesis with various deposition conditions. The influences
of various deposition conditions on thermal conductivity of diamond fi
lm were studied. The results show that large-grain (100)-oriented diam
ond films synthesised at lower concentration of methane end acetone ha
ve higher thermal conductivity and thermal conductivity increases with
the increasing in film thickness and the removal of the SiC layer on
the back of the film, at last, annealing in ambience of hydrogen is ad
vantageous to acquiring diamond him with high thermal conductivity.