FORMATION OF CARBON NITRIDE FILMS BY NITROGEN ION-BOMBARDMENT ON C-60FILMS

Citation
Zm. Ren et al., FORMATION OF CARBON NITRIDE FILMS BY NITROGEN ION-BOMBARDMENT ON C-60FILMS, Chinese Physics Letters, 13(9), 1996, pp. 714-717
Citations number
17
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
13
Issue
9
Year of publication
1996
Pages
714 - 717
Database
ISI
SICI code
0256-307X(1996)13:9<714:FOCNFB>2.0.ZU;2-6
Abstract
The synthesis of covalent carbon nitride films becomes an important su bject in the materials research field. As a new synthetic method two l ow-energy (400 md 1000 eV) nitrogen ion beams are used to bombard on C -60 thin films individual. The bombarded films are used for Raman and x-ray photoelectron spectroscopy (XPS) measurements. The results of th e analyses show that under the bombardment of 400 eV nitrogen ion beam , the film still contains a large amount of undestructed C-60 molecule s. In the case of 1000 eV bombardment, only a little amount of C-60 mo lecules is kept undestructed. The experimental results also show that the destructed carbon species will combine chemically with nitrogen io ns to form stable convalent carbon nitride, confirmed by the Raman pea ks of, e.g., 2240 cm(-1). The XPS N1s and C1s lines also indicate the formation of covalent carbon nitride in the bombarded films.