TIGHT-BINDING APPROACH FOR THE BAND-STRUCTURE OF GAAS-TYPE SEMICONDUCTORS

Authors
MERIAN M LAMPEL G COQBLIN B
Citation
M. Merian et al., TIGHT-BINDING APPROACH FOR THE BAND-STRUCTURE OF GAAS-TYPE SEMICONDUCTORS, Physica status solidi. b, Basic research, 185(2), 1994, pp. 389-408
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
185
Issue
2
Year of publication
1994
Pages
389 - 408
Database
ISI
SICI code
0370-1972(1994)185:2<389:TAFTBO>2.0.ZU;2-H
Abstract
The band structure of GaAs-type semiconductors is studied within a tig ht-binding calculation, taking into account the s and p atomic energie s including spin-orbit couplings for both anions and cations. The 16 x 16 matrix is solved analytically in perturbation theory for the condu ction band near the Gamma-point, which yields an analytical derivation of the k(3)-term. The computed values of the coefficient of the k(3)- term agree with experimental ones in III-V semiconductors.