35-GHZ HEMT AMPLIFIERS FABRICATED USING INTEGRATED HEMT-HBT MATERIAL GROWN BY SELECTIVE MBE

Authors
UMEMOTO DK STREIT DC KOBAYASHI KW OKI AK
Citation
Dk. Umemoto et al., 35-GHZ HEMT AMPLIFIERS FABRICATED USING INTEGRATED HEMT-HBT MATERIAL GROWN BY SELECTIVE MBE, IEEE microwave and guided wave letters, 4(11), 1994, pp. 361-363
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
11
Year of publication
1994
Pages
361 - 363
Database
ISI
SICI code
1051-8207(1994)4:11<361:3HAFUI>2.0.ZU;2-0
Abstract
We have fabricated 35-GHz balanced low-noise amplifiers using pseudomo rphic InGaAs-GaAs HEMT material monolithically integrated with HBT mat erial grown by selective MBE. The 0.2-mum T-gate HEMT amplifiers fabri cated using a merged HEMT-HBT process have equivalent gain and noise f igure compared to amplifiers fabricated using normal MBE and our basel ine HEMT-only process. This demonstration of high performance HEMT amp lifiers using integrated HEMT-HBT material and a merged HEMT-HBT proce ss enables the fabrication of a new class of multifunction monolithic microwave integrated circuits.