Mg. Dowsett et Rd. Barlow, CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY, Analytica chimica acta, 297(1-2), 1994, pp. 253-275
Methods for the quantitative analysis of very thin (delta) layers and
sharp interfaces in semiconductors, differentiating between features c
lose to or consisting of changes in matrix composition, and dilute fea
tures are reviewed. Although it is shown that no method currently exis
ts for accurate quantification in the former case, a number of experim
ental techniques for obtaining the best estimate of the true concentra
tion profile are described, in particular the use of XCs(+) secondary
ions. For dilute features, it is shown that deconvolution of the chemi
cal profile using a correctly defined response function gives complete
quantification, and the formal framework of the method is given. Dept
h resolution, and the difficulties inherent in defining and measuring
consistent parameters, related to particular mechanisms are discussed
within this context.