THEORETICAL INVESTIGATION OF MINORITY-CARRIER LEAKAGES OF HIGH-POWER 0.8-MU-M INGAASP INGAP/GAAS LASER-DIODES/

We report a theoretical model that accurately describes the effects of minority carrier leakage from the InGaAsP waveguide into InGaP claddi ng layers in high-power aluminum-free 0.8 mu m InGaAsP/InGaP/GaAs sepa rate confinement heterostructure lasers. Current leakage due to the re latively low band-gap discontinuity between the active region and the InGaP barrier can be eliminated by employing laser diodes with cavity length longer than 500 mu m. Experimental results for lasers grown by low-pressure metalorganic chemical vapor deposition are in excellent a greement with the theoretical model. (c) 1994 American Institute of Ph ysics.