HIGH-QUALITY WAVELENGTH TUNED MULTIQUANTUM-WELL GAINAS GAINASP LASERSFABRICATED USING PHOTOABSORPTION INDUCED DISORDERING/

Broad area oxide strip lasers have been fabricated from GaInAs/GaInAsP multiquantum well laser material which has undergone various degrees of intermixing by photoabsorption induced disordering. This process pr ovides an effective way of altering the emission wavelength of lasers fabricated from a single epitaxial wafer, and we have demonstrated blu e shifts of up to 160 nm in lasing spectra. The band gap tuned lasers are also assessed in terms of threshold current density, internal quan tum efficiency, and internal loss and it is shown that good device per formance is maintained. (c) 1994 American Institute of Physics.