INFLUENCE OF THE HIGH-VOLTAGE PULSE-SHAPE ON THE PLASMA SOURCE ION-IMPLANTATION PROCESS

Citation
Rr. Speth et al., INFLUENCE OF THE HIGH-VOLTAGE PULSE-SHAPE ON THE PLASMA SOURCE ION-IMPLANTATION PROCESS, Applied physics letters, 65(18), 1994, pp. 2272-2274
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
18
Year of publication
1994
Pages
2272 - 2274
Database
ISI
SICI code
0003-6951(1994)65:18<2272:IOTHPO>2.0.ZU;2-N
Abstract
Using a two fluid model, we investigate the effects on the ion impact energy, of varying the shape of a large, negative, finite rise time, v oltage pulse to a planar target. Two pulse shapes are tested, one with exponential shutoff, and one with a powered linear shutoff. For pulse lengths under 50 mu s, we find that pulse shaping can be used to make moderate changes in the energy distribution of the implanted ions. Fo r pulse lengths over 50 mu s, there is a negligible difference in the ion impact energy distribution for the pulse shapes tested. (c) 1994 A merican Institute of Physics.