OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI

We demonstrate that at least two varieties of E' defect precursors exi st in a wide variety of conventionally processed thermal SiO2 thin fil ms. We provisionally label the defects EP and E(gamma p)'. We find tha t EP defect capture cross sections exceed the corresponding E(gamma p) ' values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E(gamma p)' defects, and that the EP resonance, unlike the E(gamma p)' resonance is not sta ble at room temperature. (c) 1994 American Institute of Physics.