STRUCTURE AND CONDUCTANCE EVOLUTION OF VERY THIN INDIUM OXIDE-FILMS

The conductance of transparent conducting oxide films as a function of their coverage has been investigated in situ. The films have been pre pared by means of reactive evaporation of In in the presence of oxygen on the glass substrate at different substrate temperatures. The analy sis shows that island growth, percolation, coalescence, and ohmic stag es can be identified. Critical parameters of the films can be determin ed during the growth, such as anisotropic and percolative growth modes , resistivity, a lower limit df the effective dopant concentration. Th e technique shows a potential for-in-depth characterization of very th in film growth. (c) 1994 American Institute of Physics.