DIRECT GROWTH OF HETEROEPITAXIAL CUINSE2 LAYERS ON SI SUBSTRATES

Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si su bstrates by molecular beam epitaxy. Epitaxial growth is achieved by us ing a proper thermal treatment of the substrate prior to the growth an d also during the initial stage of CIS growth. (100)-oriented and (112 )-oriented CIS layers with chalcopyrite crystal structure, and free fr om impurity phases have been obtained on Si(100) and Si(111), respecti vely. Different methods have been used to study the growth kinetics an d structural quality of the epitaxial layers. Twinning in (112)-orient ed CIS layers depends on the deposition recipe. A Rutherford backscatt ered ion channeling minimum yield of about 13%, and an x-ray rocking-c urve width of about 900 arcsec have been measured for a 0.4 mu m thick heteroepitaxial CIS(112) layer on Si(111) substrate. (c) 1994 America n Institute of Physics.