ROOM-TEMPERATURE ELECTROLUMINESCENCE AT WAVELENGTHS OF 5-7-MU-M FROM HGCDTE HETEROSTRUCTURE DIODES

Authors
ASHLEY T ELLIOTT CT GORDON NR HALL RS MAXEY CD MATTHEWS BE
Citation
T. Ashley et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE AT WAVELENGTHS OF 5-7-MU-M FROM HGCDTE HETEROSTRUCTURE DIODES, Applied physics letters, 65(18), 1994, pp. 2314-2316
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
18
Year of publication
1994
Pages
2314 - 2316
Database
ISI
SICI code
0003-6951(1994)65:18<2314:REAWO5>2.0.ZU;2-H
Abstract
Room-temperature electroluminescence at peak wavelengths of 5-7 mu m h as been observed in metalorganic vapor phase epitaxy-grown mercury cad mium telluride, fully impurity doped, heterostructure, mesa diodes. Th e internal quantum efficiency at low injection for 5 mu m emission is around 4X10(-4). Maximum output power at 295 K is 6 nW from an 80 mu m diameter device (120 mu W Cm-2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented. (C) 1994 American Institute of P hysics.