T. Ashley et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE AT WAVELENGTHS OF 5-7-MU-M FROM HGCDTE HETEROSTRUCTURE DIODES, Applied physics letters, 65(18), 1994, pp. 2314-2316
Room-temperature electroluminescence at peak wavelengths of 5-7 mu m h
as been observed in metalorganic vapor phase epitaxy-grown mercury cad
mium telluride, fully impurity doped, heterostructure, mesa diodes. Th
e internal quantum efficiency at low injection for 5 mu m emission is
around 4X10(-4). Maximum output power at 295 K is 6 nW from an 80 mu m
diameter device (120 mu W Cm-2) at 50% duty cycle. The dependence of
intensity on current, the emission spectra, and an infrared microscope
image of the emission are presented. (C) 1994 American Institute of P
hysics.