CHARACTERIZATION OF POLYSTYRENE ON ETCHED SILVER USING ION-SCATTERINGAND X-RAY PHOTOELECTRON-SPECTROSCOPY - CORRELATION OF SECONDARY-ION YIELD IN TIME-OF-FLIGHT SIMS WITH SURFACE COVERAGE

Citation
Dc. Muddiman et al., CHARACTERIZATION OF POLYSTYRENE ON ETCHED SILVER USING ION-SCATTERINGAND X-RAY PHOTOELECTRON-SPECTROSCOPY - CORRELATION OF SECONDARY-ION YIELD IN TIME-OF-FLIGHT SIMS WITH SURFACE COVERAGE, Journal of physical chemistry, 98(44), 1994, pp. 11570-11575
Citations number
26
Categorie Soggetti
Chemistry Physical
ISSN journal
00223654
Volume
98
Issue
44
Year of publication
1994
Pages
11570 - 11575
Database
ISI
SICI code
0022-3654(1994)98:44<11570:COPOES>2.0.ZU;2-P
Abstract
Characterization of polystyrene on etched silver substrates has been c arried out using ion scattering (ISS) and X-ray photoelectron spectros copy (XPS). The results have been used to describe the variation of ti me-of-flight secondary-ion yield (TOF-SIMS) for polystyrene as a funct ion of coverage. It was determined that the TOF-SIMS secondary-ion yie ld increases with surface coverage up to ca. 0.50 and then drastically decreases for coverages greater than 0.55. XPS results also indicate that polystyrene forms a multilayer structure, a minimum of 5 layers t hick on the Ag surface over the concentration range investigated (1 mu g/mL to 50 mg/mL).