The Atomic Force Microscope used in resonant models a powerful tool to
measure local surface properties : for example, the quantitative anal
ysis of the electrical forces induced by the application of an electri
cal tension between a conductive microscope tip and a surface in front
allows the determination of the tip/surface capacitance and of the lo
cal surface work function. However, this analysis needs a well adapted
model for each type of surface. In this paper, we calculate, with a s
imple geometrical model, the tip-surface interaction for a metallic ti
p and a semiconducting surface and we describe its variation with the
applied tension and the tip/surface distance. Our results show differe
nt kinds of behaviour that we are able to associate with the different
semiconductor regimes (accumulation, depletion, inversion). Therefore
, it is not possible to describe this tip-surface system as a passive
capacitance.