STARK-EFFECT AND EXCITONIC TUNNELING ESCAPE PROCESS IN SEMICONDUCTOR QUANTUM-WELLS

In this work, we have numerically integrated in space and time the eff ective mass Schrodinger equation for an exciton in a semiconductor qua ntum-well structure. Considering a Coulomb interaction between the ele ctron-hole pair and an external electric field, we have studied the ex citonic tunneling escape process from semiconductor quantum wells. Our method of calculation has been applied to types-I, -II, and -III quan tum-well superlattices. In addition, we present the calculated exciton ic lifetimes for the GaAs/GalAs, InAs/GaSb, and HgTe/HgCdTe systems un der an external electric field. In the HgTe/CdTe system, the possibili ty of having similar electron and hole lifetime values is also found i f the applied electric field is large enough.