CONTROL OF NITROGEN INCORPORATION IN ZNTE-N GROWN BY MOLECULAR-BEAM EPITAXY USING AR DILUTION IN A N-PLASMA SOURCE

The use of Ar dilution in a N plasma source has been used to achieve c ontrol of both electrical and optical properties of p-type ZnTe:N grow n by molecular-beam epitaxy. Photoluminescence data are presented that show the transition from ''pure'' ZnTe emission to that indicative of heavily N-doped ZnTe. A new principal bound-exciton line associated w ith N impurities is observed at 2.3685 eV. An anomalous red shift in t he corresponding donor-acceptor pair peak energy with increasing N con centration is observed at high N concentration and is attributed to th e effects of N impurity banding. Trends in p-type conductivity confirm ed the ability to control hole concentrations using Ar dilution.