ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL

In the phase-coherent transport regime the possibility of a solid-stat e electron biprism employing an intentionally implanted impurity in a split-gate heterostructure is theoretically studied. The impurity-assi sted interference phenomenon has been investigated under several impur ity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quant itative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided-mode dynamics with in the constriction.