Mh. Yuan et al., EFFECT OF BIAS ANNEALING ON AU N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION/, Journal of applied physics, 76(9), 1994, pp. 5592-5594
The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 e
V lower SB height (SBH) than that without hydrogen. For the hydrogen-c
ontaining SB, zero bias annealing (ZBA) decreases the SBH while revers
e bias annealing (RBA) increases it. In addition, ZBA and RBA cycling
experiments have been made which reveal a reversible change of the SBH
within at least four cycles. The annealing temperature of ZBA and esp
ecially of RBA influences the SBH. We interpret the above effect in te
rms of an interaction between hydrogen and metal-semiconductor interfa
ce states.