EFFECT OF BIAS ANNEALING ON AU N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION/

The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 e V lower SB height (SBH) than that without hydrogen. For the hydrogen-c ontaining SB, zero bias annealing (ZBA) decreases the SBH while revers e bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and esp ecially of RBA influences the SBH. We interpret the above effect in te rms of an interaction between hydrogen and metal-semiconductor interfa ce states.