PHOTOLUMINESCENCE AND PASSIVATION OF SILICON NANOSTRUCTURES

A new method was used to fabricate nanometer-scale structures in Si fo r photoluminescence studies. Helium ions were implanted to form a dens e subsurface layer of small cavities (1-16 nm diameter). Implanted spe cimens subjected to annealing in a variety of atmospheres yielded no d etectable photoluminescence. However, implantation combined with elect rochemical anodization produced a substantial blueshift relative to an odization alone. This blueshift is consistent with the quantum confine ment model of photoluminescence in porous silicon. (C) American Instit ute of Physics.