LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF CUBIC GAN OVER(100)GAAS SUBSTRATES

We report on the low pressure metal organic chemical-vapor deposition of single crystal cubic GaN films over (100) GaAs substrates. Using ph otoluminescence and direct optical absorption measurements we estimate the band gap for c-GaN at room temperature to be 3.3 eV. Reflection h igh energy electron diffraction, x-ray, transmission electron microsco py, optical absorption, and room-temperature photoluminescence data ar e presented to establish the quality of a 0.8-mu m-thick cubic GaN fil m over (100) GaAs substrate. Preliminary measurement results for the c arrier density and mobility of the as-deposited c-GaN film are also pr esented. (C) 1994 American Institute of Physics.