TICN - A NEW CHEMICAL-VAPOR-DEPOSITED CONTACT BARRIER METALLIZATION FOR SUBMICRON DEVICES

High-quality chemical vapor deposited TiCN films were produced in a si ngle wafer reactor using a metallorganic (TDMAT) precursor. The films have excellent step coverage over high aspect-ratio contacts as well a s very low particle content. These properties are obtained because the films are deposited under surface-reaction controlled conditions. The films show also excellent barrier properties against Al and WF6 attac k. These properties make this material a superb contact barrier materi al for ultra-large-scale integrated devices. (C) 1994 American Institu te of Physics.