HYDROGEN-INDUCED DONOR-TYPE SI SIO2 INTERFACE STATES/

Study of donor-type Si/SiO2 interfaces states shows that these centers anneal at room temperature when neutral but are stable when charged p ositively. Moreover, the anneal process is accompanied by the release of H. We propose that the donor states are related to H attached to in terfacial network sites, most likely O atoms, constituting electricall y active complexes. When positively charged, H is strongly bonded; whe n neutral H is only weakly attached. In the latter case it can escape and dimerize so that the states disappear. Similar complexes tying dow n H in a positively charged state would constitute small cross-section hole traps in the bulk of the oxide. (C) 1994 American Institute of P hysics.