The intensity of impurity and intrinsic luminescence lines reflects th
e impurity doping concentration. A calibration procedure is presented
for the nitrogen impurity in 6H-SiC. The calibration is valid for a la
rge range of n-type doping from 10(14) to 10(16) cm(-3). Effects of ex
citation density, temperature during the photoluminescence experiments
as well as the observation of acceptor related lines are discussed. (
C) 1994 American Institute of Physics.