TUNNELING HOT-ELECTRON TRANSISTOR AS A HIGH-POWER SOURCE AT TERAHERTZFREQUENCIES

Authors
DELLOW MW CRONIN NJ BENDING SJ
Citation
Mw. Dellow et al., TUNNELING HOT-ELECTRON TRANSISTOR AS A HIGH-POWER SOURCE AT TERAHERTZFREQUENCIES, Applied physics letters, 65(19), 1994, pp. 2463-2465
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
19
Year of publication
1994
Pages
2463 - 2465
Database
ISI
SICI code
0003-6951(1994)65:19<2463:THTAAH>2.0.ZU;2-D
Abstract
A novel device is proposed, based upon a tunneling hot electron transf er amplifier, which exhibits the characteristics of negative different ial resistance (NDR) coupled with high current gain. The mechanism whi ch produces the NDR is known to be extremely fast. The combination of these features suggests that such a device could be used as a high pow er source of terahertz radiation. (C) 1994 American Institute of Physi cs.