GROWTH AND PROPERTIES OF LA2-XSRXCUO4 FILMS

Authors
TROFIMOV IE JOHNSON LA RAMANUJACHARY KV GUHA S HARRISON MG GREENBLATT M CIEPLAK MZ LINDENFELD P
Citation
Ie. Trofimov et al., GROWTH AND PROPERTIES OF LA2-XSRXCUO4 FILMS, Applied physics letters, 65(19), 1994, pp. 2481-2483
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
19
Year of publication
1994
Pages
2481 - 2483
Database
ISI
SICI code
0003-6951(1994)65:19<2481:GAPOLF>2.0.ZU;2-0
Abstract
Single-crystalline films of La2-xSrxCuO4 have been grown epitaxially o n SrTiO3, NdGaO3, and LaSrAlO4 substrates by laser ablation. We show t hat record values of the superconducting transition temperature may be achieved by high-pressure annealing in oxygen. The films exhibit valu es of T-co above 38 K, as well as a linear variation of the resistivit y with T and excellent crystal quality. (C) 1994 American Institute of Physics.