ULTRAFAST CARRIER DYNAMICS IN IN1-XGAXAS INP HETEROSTRUCTURES

We investigate carrier capture and carrier transport in the InGaAs/InP material system by luminescence spectroscopy with femtosecond time re solution. Comparative studies are performed on samples of different we ll width, barrier width and gallium mole fraction of the InGaAs layers . The investigations focus on excitation conditions that are comparabl e to those for semiconductor laser operation. Firm data on carrier dyn amics are presented for these conditions. We find that the overall tra nsfer rates of electrons and holes are similar and independent of well width. Furthermore, the transfer times show a linear dependence on ba rrier width. From experimental and model calculation results we derive some guidelines for the design of high-frequency laser devices.