SPECIFIC CONTACT RESISTANCE AT EXTREMELY LOW-TEMPERATURES

The temperature-dependence of specific contact resistance for temperat ures between room temperature and liquid-helium temperature (greater t han or equal to 4.2 K) has been investigated for Al-to-boron- (1.2 x 1 0(20)cm(-3)) and Mg/Al-to-phosphorus(1 x 10(21) Cm-3) doped-silicon co ntacts. The specific contact resistance of these high-doping-density S i contacts was as low as 10(-7) Omega cm(2), even at low temperatures. The resistivity was found to increase slightly as temperature decreas ed, in contrast with previous predictions.