ABSENCE OF CORRELATION BETWEEN DISORDER AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

Authors
GANGULY G SAKATA I OKUSHI H MATSUDA A
Citation
G. Ganguly et al., ABSENCE OF CORRELATION BETWEEN DISORDER AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON, JPN J A P 2, 34(3A), 1995, pp. 277-280
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
3A
Year of publication
1995
Pages
277 - 280
Database
ISI
SICI code
Abstract
We find no correlation between a significant variation of the disorder induced band-tail density-of-states distribution and the density of e ither annealed or light-induced metastable defects in hydrogenated amo rphous silicon, which contradicts some currently prevalent notions abo ut the origin of these defects.