PHOTOLUMINESCENCE OF SI0.83GE0.17 QUANTUM-WELLS GROWN ON (100)SI BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

PL measurements at 77 K are shown for Si0.83Ge0.17 QWs grown on (100)S i at 550 degrees C by LPCVD. The relation between PL peak energies and QW widths shows good agreement with the theoretical one. The peak shi ft energy of multiple QWs as it relates to the Si barrier thickness is explained by the change in the ground state energy level of the minib ands formed. The PL spectra show a very weak intensity for the D-1 lin e, reflecting defects in the QWs, whose defect density was below the T EM observation limit (<10(6) cm(-2)). The QWs have precisely abrupt Si /SiGe interfaces with a lambda value of 0.6 nm.