EFFECT OF ELECTRON-BEAM IRRADIATION ON SI SURFACE CLEANING IN ULTRAHIGH-VACUUM SYSTEM

Effect of electron beam irradiation (15 kV) on Si surface cleaning pri or to epitaxial growth in an ultrahigh-vacuum system was investigated. A CaF2 film was epitaxially grown on the Si surface, and the interfac e was observed by high-voltage electron microscopy. Amorphous layers, which were observed in the interface prepared with conventional therma l treatment at 750 degrees C, became much smaller with electron beam i rradiation after the thermal treatment. Based on the electron microsco pe observation, the effect of electron beam irradiation on Si surface cleaning was briefly discussed.