Surface microroughness and its effects on dielectric breakdown charact
eristics have been investigated for silicon wafers treated in SC1-base
d solutions. Surface microroughness was quantified using atomic force
microscopy (AFM) and phase shift interferometry (PSI). In contrast to
previous reports that SC1 treatment caused undulation of the surface,
our observation showed a nominal amount of deterioration. Even prolong
ed dipping in a solution with high etching rate did not roughen the su
rface, and the dielectric breakdown characteristics were not affected.