EFFECT OF SC1 PROCESS ON SILICON SURFACE MICROROUGHNESS AND OXIDE BREAKDOWN CHARACTERISTICS

Surface microroughness and its effects on dielectric breakdown charact eristics have been investigated for silicon wafers treated in SC1-base d solutions. Surface microroughness was quantified using atomic force microscopy (AFM) and phase shift interferometry (PSI). In contrast to previous reports that SC1 treatment caused undulation of the surface, our observation showed a nominal amount of deterioration. Even prolong ed dipping in a solution with high etching rate did not roughen the su rface, and the dielectric breakdown characteristics were not affected.