ANNEALING BEHAVIOR OF A LIGHT-SCATTERING TOMOGRAPHY DETECTING DEFECT NEAR-THE-SURFACE OF SI WAFERS

We have investigated the annealing behavior of a Light Scattering Tomo graphy detecting Defect (LSTD) which exists in 0 to about 20 mu m bene ath the surface of Si wafers. LSTDs were detected at the beam position s by the obliquely incident method of the infrared light scattering to mography (IR-LST) before and after annealing at temperatures from 1000 degrees C to 1280 degrees C in dry O-2 or N-2. LSTDs still existed af ter annealing at temperatures below 1250 degrees C and disappeared aft er annealing at 1280 degrees C. The annealing behavior of LSTDs did no t depend on the ambient, dry O-2 or N-2, during annealing and location s of LSTDs.