STRESS-INDUCED RAMAN FREQUENCY-SHIFT IN CUINSE2 THIN-FILMS PREPARED BY LASER-ABLATION

Thin films of CuInSe2 have been prepared by laser ablation using a Nd: YAG laser at substrate temperatures up to 450 degrees C. Raman scatter ing experiments have shown that the frequency of the Al phonon mode fo r these films shifts markedly to higher frequencies similarly with CuI nSe2 single crystals under compression. The existence of compressive s tress in the films has been confirmed by observing the bending of a co ver glass used as substrate. The magnitude and temperature dependence of the stress estimated from the frequency shifts agree with those det ermined from the degree of bending.