A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON

The mechanism of oxidation-induced stacking fault (OSF) formation in C zochralski silicon (CZ-Si) crystals was investigated by transmission e lectron microscopy observations of the initial stages of OSF growth. O SFs were observed to be always generated at one of the [110] edges of platelet oxygen precipitates. We observed previously that these platel et oxygen precipitates had an expansive strain field in the direction parallel to the precipitate plate and a compressive strain field norma l to the plate. Silicon self-interstitials having compressive strain a re probably attracted to the expansive strain field of the precipitate s, and condense to form stacking faults. A new model for OSF generatio n is presented taking into consideration the strain field around self- interstitials and oxygen precipitates.