OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS

novel Schottky in-plane gate (IPG) quantum wire transistor has been su ccessfully fabricated for the first time on a GaAs/AlGaAs quantum-well (QW) wafer, using a low-damage in situ electrochemical process. In co mparison with previous IPG transistors of insulated-gate type, the pre sent Schottky IPG device exhibited much better gate control of drain c urrents. In spite of large device dimensions of several hundred nanome ters, sharp quantized conductance steps in units of 2e(2)/h were obser ved up to 40 K as a result of the inherent strong electron confinement capability of the present IPG structure.