ENHANCED THERMAL-OXIDATION OF SILICON BY OXYGEN JET

Thermal oxidation of silicon by dry oxygen jet was conducted and the e nhancement of the oxidation rate was observed. Oxidation rate was diff usion-limited similarly to the ordinary thermal oxidation under atmosp heric pressure. The factor B in the rate equation was increased almost proportionally to the pressure of oxygen as in a case of high-pressur e oxidation. MOS diodes fabricated with this oxide contained smaller a mount of flat-band charges than normally-oxidized ones, which is the r eflection of smaller density of interface traps in the energy range ex tending in the upper half of the silicon bandgap.