NEAR-1.3-MU-M HIGH-INTENSITY PHOTOLUMINESCENCE AT ROOM-TEMPERATURE BYINAS GAAS MULTI-COUPLED QUANTUM DOTS/

We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the pho toexcited carriers tunnel into the larger quantum dots which have lowe r energy states. This energy relaxation results in narrower and strong er photoluminescence than with conventional quantum dots. InAs/GaAs se lf-organized multi-coupled quantum dots show strong photoluminescence near 1.3 mu m at room temperature, whose intensity is as large as in t he well-known highly efficient InGaAs/GaAs quantum wells.