IN-SITU MONITORING OF AL GROWTH IN CHEMICAL-VAPOR-DEPOSITION BY DETECTING REFLECTED LASER-LIGHT INTENSITY

A nondestructive, noncontact monitoring method has been developed for Al chemical vapor deposition (CVD). This monitoring method involves ir radiating He-Ne laser light on the substrate surface and detecting the reflected light intensity. The intensity changes with deposition time corresponded to the following stage of Al island formation, island co alescence, continuous smooth film formation, and surface roughening. T he effectiveness of this method was demonstrated by applying it to Al growth on both in situ sputtered Ti and SiO2 pretreated with tetrakisd imethylamino-titanium for nucleation enhancement.